Method for making cmos image sensor including photodiodes with overlying superlattices to reduce crosstalk

ABSTRACT

A method for making a CMOS image sensor may include forming a plurality of laterally adjacent photodiodes on a semiconductor substrate having a first conductivity types by forming a retrograde well extending downward into the substrate from a surface thereof and having a second conductivity type, forming a first well around a periphery of the retrograde well also having the second conductivity type, and forming a second well within the retrograde well having the first conductivity type. Furthermore, first and second superlattices may be respectively formed overlying each of the first and second wells, with each of the first and second superlattices comprising a plurality of stacked groups of layers, and each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

TECHNICAL FIELD

The present disclosure generally relates to semiconductor devices and,more particularly, to CMOS image sensors.

BACKGROUND

Structures and techniques have been proposed to enhance the performanceof semiconductor devices, such as by enhancing the mobility of thecharge carriers. For example, U.S. Patent Application No. 2003/0057416to Currie et al. discloses strained material layers of silicon,silicon-germanium, and relaxed silicon and also including impurity-freezones that would otherwise cause performance degradation. The resultingbiaxial strain in the upper silicon layer alters the carrier mobilitiesenabling higher speed and/or lower power devices. Published U.S. PatentApplication No. 2003/0034529 to Fitzgerald et al. discloses a CMOSinverter also based upon similar strained silicon technology.

U.S. Pat. No. 6,472,685 B2 to Takagi discloses a semiconductor deviceincluding a silicon and carbon layer sandwiched between silicon layersso that the conduction band and valence band of the second silicon layerreceive a tensile strain. Electrons having a smaller effective mass, andwhich have been induced by an electric field applied to the gateelectrode, are confined in the second silicon layer, thus, an n-channelMOSFET is asserted to have a higher mobility.

U.S. Pat. No. 4,937,204 to Ishibashi et al. discloses a superlattice inwhich a plurality of layers, less than eight monolayers, and containinga fractional or binary or a binary compound semiconductor layer, arealternately and epitaxially grown. The direction of main current flow isperpendicular to the layers of the superlattice.

U.S. Pat. No. 5,357,119 to Wang et al. discloses a Si—Ge short periodsuperlattice with higher mobility achieved by reducing alloy scatteringin the superlattice. Along these lines, U.S. Pat. No. 5,683,934 toCandelaria discloses an enhanced mobility MOSFET including a channellayer comprising an alloy of silicon and a second materialsubstitutionally present in the silicon lattice at a percentage thatplaces the channel layer under tensile stress.

U.S. Pat. No. 5,216,262 to Tsu discloses a quantum well structurecomprising two barrier regions and a thin epitaxially grownsemiconductor layer sandwiched between the barriers. Each barrier regionconsists of alternate layers of SiO2/Si with a thickness generally in arange of two to six monolayers. A much thicker section of silicon issandwiched between the barriers.

An article entitled “Phenomena in silicon nanostructure devices” also toTsu and published online Sep. 6, 2000 by Applied Physics and MaterialsScience & Processing, pp. 391-402 discloses a semiconductor-atomicsuperlattice (SAS) of silicon and oxygen. The Si/O superlattice isdisclosed as useful in a silicon quantum and light-emitting devices. Inparticular, a green electroluminescence diode structure was constructedand tested. Current flow in the diode structure is vertical, that is,perpendicular to the layers of the SAS. The disclosed SAS may includesemiconductor layers separated by adsorbed species such as oxygen atoms,and CO molecules. The silicon growth beyond the adsorbed monolayer ofoxygen is described as epitaxial with a fairly low defect density. OneSAS structure included a 1.1 nm thick silicon portion that is abouteight atomic layers of silicon, and another structure had twice thisthickness of silicon. An article to Luo et al. entitled “Chemical Designof Direct-Gap Light-Emitting Silicon” published in Physical ReviewLetters, Vol. 89, No. 7 (Aug. 12, 2002) further discusses the lightemitting SAS structures of Tsu.

Published International Application WO 02/103,767 A1 to Wang, Tsu andLofgren, discloses a barrier building block of thin silicon and oxygen,carbon, nitrogen, phosphorous, antimony, arsenic or hydrogen to therebyreduce current flowing vertically through the lattice more than fourorders of magnitude. The insulating layer/barrier layer allows for lowdefect epitaxial silicon to be deposited next to the insulating layer.

Published Great Britain Patent Application 2,347,520 to Mears et al.discloses that principles of Aperiodic Photonic Band-Gap (APBG)structures may be adapted for electronic bandgap engineering. Inparticular, the application discloses that material parameters, forexample, the location of band minima, effective mass, etc., can betailored to yield new aperiodic materials with desirable band-structurecharacteristics. Other parameters, such as electrical conductivity,thermal conductivity and dielectric permittivity or magneticpermeability are disclosed as also possible to be designed into thematerial.

Furthermore, U.S. Pat. No. 6,376,337 to Wang et al. discloses a methodfor producing an insulating or barrier layer for semiconductor deviceswhich includes depositing a layer of silicon and at least one additionalelement on the silicon substrate whereby the deposited layer issubstantially free of defects such that epitaxial silicon substantiallyfree of defects can be deposited on the deposited layer. Alternatively,a monolayer of one or more elements, preferably comprising oxygen, isabsorbed on a silicon substrate. A plurality of insulating layerssandwiched between epitaxial silicon forms a barrier composite.

Despite the existence of such approaches, further enhancements may bedesirable for using advanced semiconductor materials and processingtechniques to achieve improved performance in semiconductor devices.

SUMMARY

A method for making a CMOS image sensor may include forming a pluralityof laterally adjacent photodiodes on a semiconductor substrate having afirst conductivity type by forming a retrograde well extending downwardinto the substrate from a surface thereof and having a secondconductivity type, forming a first well around a periphery of theretrograde well also having the second conductivity type, and forming asecond well within the retrograde well having the first conductivitytype. Furthermore, first and second superlattices may be respectivelyformed overlying each of the first and second wells, with each of thefirst and second superlattices comprising a plurality of stacked groupsof layers, and each group of layers comprising a plurality of stackedbase semiconductor monolayers defining a base semiconductor portion andat least one non-semiconductor monolayer constrained within a crystallattice of adjacent base semiconductor portions.

More particularly, the first well may define a ring, and the second wellmay be within the ring. Forming the second well may include forming alower portion and an upper portion, the upper portion having a higherdopant concentration than the lower portion. The method may also includeforming a shallow trench isolation (STI) region between the first andsecond wells. In addition, a respective STI region may for formedbetween laterally adjacent photodiodes. The method may further includeforming a respective microlens overlying each of the photodiodes. Inaccordance with another example aspect, the method may further includeforming a respective color lens overlying each of the photodiodes.

By way of example, the first and second superlattices may each furtherinclude a semiconductor cap layer thereon. Also by way of example, theat least one non-semiconductor monolayer may comprise oxygen, and thesemiconductor monolayers may comprise silicon.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a greatly enlarged schematic cross-sectional view of asuperlattice for use in a semiconductor device in accordance with anexample embodiment.

FIG. 2 is a perspective schematic atomic diagram of a portion of thesuperlattice shown in FIG. 1.

FIG. 3 is a greatly enlarged schematic cross-sectional view of anotherembodiment of a superlattice in accordance with an example embodiment.

FIG. 4A is a graph of the calculated band structure from the gamma point(G) for both bulk silicon as in the prior art, and for the 4/1 Si/Osuperlattice as shown in FIGS. 1-2.

FIG. 4B is a graph of the calculated band structure from the Z point forboth bulk silicon as in the prior art, and for the 4/1 Si/O superlatticeas shown in FIGS. 1-2.

FIG. 4C is a graph of the calculated band structure from both the gammaand Z points for both bulk silicon as in the prior art, and for the5/1/3/1 Si/O superlattice as shown in FIG. 3.

FIG. 5 is a schematic diagram of a CMOS image sensor includingphotodiodes with superlattice layers therein in accordance with anexample embodiment.

FIG. 6 is a schematic cross sectional diagram of an example photodiodeincluding superlattice layers which may be used in the CMOS image sensorof FIG. 5.

FIG. 7 is a flow diagram illustrating an example method for making thephotodiode of FIG. 6.

FIG. 8 is a schematic cross sectional diagram of another examplephotodiode including superlattice layers which may be used in the CMOSimage sensor of FIG. 5.

FIG. 9 is a flow diagram illustrating an example method for making thephotodiode of FIG. 6.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings, in which the example embodimentsare shown. The embodiments may, however, be implemented in manydifferent forms and should not be construed as limited to the specificexamples set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete. Like numbers referto like elements throughout, and prime notation is used to indicatesimilar elements in different embodiments.

Generally speaking, the present disclosure relates to CMOS image sensorshaving an enhanced semiconductor superlattice therein which may provideimproved retrograde well profiles and reduced crosstalk between adjacentpixels. Applicant theorizes, without wishing to be bound thereto, thatcertain superlattices as described herein reduce the effective mass ofcharge carriers and that this thereby leads to higher charge carriermobility. Effective mass is described with various definitions in theliterature. As a measure of the improvement in effective massApplicant's use a “conductivity reciprocal effective mass tensor”, M_(e)⁻¹ and M_(h) ⁻¹ for electrons and holes respectively, defined as:

${M_{e,{ij}}^{- 1}\left( {E_{F},T} \right)} = \frac{\sum\limits_{E > E_{F}}{\int_{B.Z.}{\left( {\nabla_{k}{E\left( {k,n} \right)}} \right)_{i}\left( {\nabla_{k}{E\left( {k,n} \right)}} \right)_{j}\frac{{\partial f}\left( {{E\left( {k,n} \right)},E_{F},T} \right)}{\partial E}d^{3}k}}}{\sum\limits_{E > E_{F}}{\int_{B.Z.}{{f\left( {{E\left( {k,n} \right)},E_{F},T} \right)}d^{3}k}}}$

for electrons and:

${M_{h,{ij}}^{- 1}\left( {E_{F},T} \right)} = \frac{- {\sum\limits_{E < E_{F}}{\int_{B.Z.}{\left( {\nabla_{k}{E\left( {k,n} \right)}} \right)_{i}\left( {\nabla_{k}{E\left( {k,n} \right)}} \right)_{j}\frac{{\partial f}\left( {{E\left( {k,n} \right)},E_{F},T} \right)}{\partial E}d^{3}k}}}}{\sum\limits_{E < E_{F}}{\int_{B.Z.}{\left( {1 - {f\left( {{E\left( {k,n} \right)},E_{F},T} \right)}} \right)d^{3}k}}}$

for holes, where f is the Fermi-Dirac distribution, E_(F) is the Fermienergy, T is the temperature, E(k,n) is the energy of an electron in thestate corresponding to wave vector k and the n^(th) energy band, theindices i and j refer to Cartesian coordinates x, y and z, the integralsare taken over the Brillouin zone (B.Z.), and the summations are takenover bands with energies above and below the Fermi energy for electronsand holes respectively.

Applicant's definition of the conductivity reciprocal effective masstensor is such that a tensorial component of the conductivity of thematerial is greater for greater values of the corresponding component ofthe conductivity reciprocal effective mass tensor. Again Applicanttheorizes without wishing to be bound thereto that the superlatticesdescribed herein set the values of the conductivity reciprocal effectivemass tensor so as to enhance the conductive properties of the material,such as typically for a preferred direction of charge carrier transport.The inverse of the appropriate tensor element is referred to as theconductivity effective mass. In other words, to characterizesemiconductor material structures, the conductivity effective mass forelectrons/holes as described above and calculated in the direction ofintended carrier transport is used to distinguish improved materials.

Applicant has identified improved materials or structures for use insemiconductor devices. More specifically, Applicant has identifiedmaterials or structures having energy band structures for which theappropriate conductivity effective masses for electrons and/or holes aresubstantially less than the corresponding values for silicon. Inaddition to the enhanced mobility characteristics of these structures,they may also be formed or used in such a manner that they providepiezoelectric, pyroelectric, and/or ferroelectric properties that areadvantageous for use in a variety of different types of devices, as willbe discussed further below.

Referring now to FIGS. 1 and 2, the materials or structures are in theform of a superlattice 25 whose structure is controlled at the atomic ormolecular level and may be formed using known techniques of atomic ormolecular layer deposition. The superlattice 25 includes a plurality oflayer groups 45 a-45 n arranged in stacked relation, as perhaps bestunderstood with specific reference to the schematic cross-sectional viewof FIG. 1.

Each group of layers 45 a-45 n of the superlattice 25 illustrativelyincludes a plurality of stacked base semiconductor monolayers 46defining a respective base semiconductor portion 46 a-46 n and an energyband-modifying layer 50 thereon. The energy band-modifying layers 50 areindicated by stippling in FIG. 1 for clarity of illustration.

The energy band-modifying layer 50 illustratively includes onenon-semiconductor monolayer constrained within a crystal lattice ofadjacent base semiconductor portions. By “constrained within a crystallattice of adjacent base semiconductor portions” it is meant that atleast some semiconductor atoms from opposing base semiconductor portions46 a-46 n are chemically bound together through the non-semiconductormonolayer 50 therebetween, as seen in FIG. 2. Generally speaking, thisconfiguration is made possible by controlling the amount ofnon-semiconductor material that is deposited on semiconductor portions46 a-46 n through atomic layer deposition techniques so that not all(i.e., less than full or 100% coverage) of the available semiconductorbonding sites are populated with bonds to non-semiconductor atoms, aswill be discussed further below. Thus, as further monolayers 46 ofsemiconductor material are deposited on or over a non-semiconductormonolayer 50, the newly deposited semiconductor atoms will populate theremaining vacant bonding sites of the semiconductor atoms below thenon-semiconductor monolayer.

In other embodiments, more than one such non-semiconductor monolayer maybe possible. It should be noted that reference herein to anon-semiconductor or semiconductor monolayer means that the materialused for the monolayer would be a non-semiconductor or semiconductor ifformed in bulk. That is, a single monolayer of a material, such assilicon, may not necessarily exhibit the same properties that it wouldif formed in bulk or in a relatively thick layer, as will be appreciatedby those skilled in the art.

Applicant theorizes without wishing to be bound thereto that energyband-modifying layers 50 and adjacent base semiconductor portions 46a-46 n cause the superlattice 25 to have a lower appropriateconductivity effective mass for the charge carriers in the parallellayer direction than would otherwise be present. Considered another way,this parallel direction is orthogonal to the stacking direction. Theband modifying layers 50 may also cause the superlattice 25 to have acommon energy band structure, while also advantageously functioning asan insulator between layers or regions vertically above and below thesuperlattice.

Moreover, this superlattice structure may also advantageously act as abarrier to dopant and/or material diffusion between layers verticallyabove and below the superlattice 25. These properties may thusadvantageously allow the superlattice 25 to provide an interface forhigh-K dielectrics which not only reduces diffusion of the high-Kmaterial into the channel region, but which may also advantageouslyreduce unwanted scattering effects and improve device mobility, as willbe appreciated by those skilled in the art.

It is also theorized that semiconductor devices including thesuperlattice 25 may enjoy a higher charge carrier mobility based uponthe lower conductivity effective mass than would otherwise be present.In some embodiments, and as a result of the band engineering achieved bythe present invention, the superlattice 25 may further have asubstantially direct energy bandgap that may be particularlyadvantageous for opto-electronic devices, for example.

The superlattice 25 also illustratively includes a cap layer 52 on anupper layer group 45 n. The cap layer 52 may comprise a plurality ofbase semiconductor monolayers 46. The cap layer 52 may have between 2 to100 monolayers of the base semiconductor, and, more preferably between10 to 50 monolayers.

Each base semiconductor portion 46 a-46 n may comprise a basesemiconductor selected from the group consisting of Group IVsemiconductors, Group III-V semiconductors, and Group II-VIsemiconductors. Of course, the term Group IV semiconductors alsoincludes Group IV-IV semiconductors, as will be appreciated by thoseskilled in the art. More particularly, the base semiconductor maycomprise at least one of silicon and germanium, for example.

Each energy band-modifying layer 50 may comprise a non-semiconductorselected from the group consisting of oxygen, nitrogen, fluorine, carbonand carbon-oxygen, for example. The non-semiconductor is also desirablythermally stable through deposition of a next layer to therebyfacilitate manufacturing. In other embodiments, the non-semiconductormay be another inorganic or organic element or compound that iscompatible with the given semiconductor processing as will beappreciated by those skilled in the art. More particularly, the basesemiconductor may comprise at least one of silicon and germanium, forexample

It should be noted that the term monolayer is meant to include a singleatomic layer and also a single molecular layer. It is also noted thatthe energy band-modifying layer 50 provided by a single monolayer isalso meant to include a monolayer wherein not all of the possible sitesare occupied (i.e., there is less than full or 100% coverage). Forexample, with particular reference to the atomic diagram of FIG. 2, a4/1 repeating structure is illustrated for silicon as the basesemiconductor material, and oxygen as the energy band-modifyingmaterial. Only half of the possible sites for oxygen are occupied in theillustrated example.

In other embodiments and/or with different materials this one-halfoccupation would not necessarily be the case as will be appreciated bythose skilled in the art. Indeed it can be seen even in this schematicdiagram, that individual atoms of oxygen in a given monolayer are notprecisely aligned along a flat plane as will also be appreciated bythose of skill in the art of atomic deposition. By way of example, apreferred occupation range is from about one-eighth to one-half of thepossible oxygen sites being full, although other numbers may be used incertain embodiments.

Silicon and oxygen are currently widely used in conventionalsemiconductor processing, and, hence, manufacturers will be readily ableto use these materials as described herein. Atomic or monolayerdeposition is also now widely used. Accordingly, semiconductor devicesincorporating the superlattice 25 in accordance with the invention maybe readily adopted and implemented, as will be appreciated by thoseskilled in the art.

It is theorized without Applicant wishing to be bound thereto that for asuperlattice, such as the Si/O superlattice, for example, that thenumber of silicon monolayers should desirably be seven or less so thatthe energy band of the superlattice is common or relatively uniformthroughout to achieve the desired advantages. The 4/1 repeatingstructure shown in FIGS. 1 and 2, for Si/O has been modeled to indicatean enhanced mobility for electrons and holes in the X direction. Forexample, the calculated conductivity effective mass for electrons(isotropic for bulk silicon) is 0.26 and for the 4/1 SiO superlattice inthe X direction it is 0.12 resulting in a ratio of 0.46. Similarly, thecalculation for holes yields values of 0.36 for bulk silicon and 0.16for the 4/1 Si/O superlattice resulting in a ratio of 0.44.

While such a directionally preferential feature may be desired incertain semiconductor devices, other devices may benefit from a moreuniform increase in mobility in any direction parallel to the groups oflayers. It may also be beneficial to have an increased mobility for bothelectrons and holes, or just one of these types of charge carriers aswill be appreciated by those skilled in the art.

The lower conductivity effective mass for the 4/1 Si/O embodiment of thesuperlattice 25 may be less than two-thirds the conductivity effectivemass than would otherwise occur, and this applies for both electrons andholes. Of course, the superlattice 25 may further comprise at least onetype of conductivity dopant therein, as will also be appreciated bythose skilled in the art.

Indeed, referring now additionally to FIG. 3, another embodiment of asuperlattice 25′ in accordance with the invention having differentproperties is now described. In this embodiment, a repeating pattern of3/1/5/1 is illustrated. More particularly, the lowest base semiconductorportion 46 a′ has three monolayers, and the second lowest basesemiconductor portion 46 b′ has five monolayers. This pattern repeatsthroughout the superlattice 25′. The energy band-modifying layers 50′may each include a single monolayer. For such a superlattice 25′including Si/O, the enhancement of charge carrier mobility isindependent of orientation in the plane of the layers. Those otherelements of FIG. 3 not specifically mentioned are similar to thosediscussed above with reference to FIG. 1 and need no further discussionherein.

In some device embodiments, all of the base semiconductor portions of asuperlattice may be a same number of monolayers thick. In otherembodiments, at least some of the base semiconductor portions may be adifferent number of monolayers thick. In still other embodiments, all ofthe base semiconductor portions may be a different number of monolayersthick.

In FIGS. 4A-4C, band structures calculated using Density FunctionalTheory (DFT) are presented. It is well known in the art that DFTunderestimates the absolute value of the bandgap. Hence all bands abovethe gap may be shifted by an appropriate “scissors correction.” Howeverthe shape of the band is known to be much more reliable. The verticalenergy axes should be interpreted in this light.

FIG. 4A shows the calculated band structure from the gamma point (G) forboth bulk silicon (represented by continuous lines) and for the 4/1 Si/Osuperlattice 25 shown in FIG. 1 (represented by dotted lines). Thedirections refer to the unit cell of the 4/1 Si/O structure and not tothe conventional unit cell of Si, although the (001) direction in thefigure does correspond to the (001) direction of the conventional unitcell of Si, and, hence, shows the expected location of the Si conductionband minimum. The (100) and (010) directions in the figure correspond tothe (110) and (−110) directions of the conventional Si unit cell. Thoseskilled in the art will appreciate that the bands of Si on the figureare folded to represent them on the appropriate reciprocal latticedirections for the 4/1 Si/O structure.

It can be seen that the conduction band minimum for the 4/1 Si/Ostructure is located at the gamma point in contrast to bulk silicon(Si), whereas the valence band minimum occurs at the edge of theBrillouin zone in the (001) direction which we refer to as the Z point.One may also note the greater curvature of the conduction band minimumfor the 4/1 Si/O structure compared to the curvature of the conductionband minimum for Si owing to the band splitting due to the perturbationintroduced by the additional oxygen layer.

FIG. 4B shows the calculated band structure from the Z point for bothbulk silicon (continuous lines) and for the 4/1 Si/O superlattice 25(dotted lines). This figure illustrates the enhanced curvature of thevalence band in the (100) direction.

FIG. 4C shows the calculated band structure from both the gamma and Zpoint for both bulk silicon (continuous lines) and for the 5/1/3/1 Si/Ostructure of the superlattice 25′ of FIG. 3 (dotted lines). Due to thesymmetry of the 5/1/3/1 Si/O structure, the calculated band structuresin the (100) and (010) directions are equivalent. Thus the conductivityeffective mass and mobility are expected to be isotropic in the planeparallel to the layers, i.e. perpendicular to the (001) stackingdirection. Note that in the 5/1/3/1 Si/O example the conduction bandminimum and the valence band maximum are both at or close to the Zpoint.

Although increased curvature is an indication of reduced effective mass,the appropriate comparison and discrimination may be made via theconductivity reciprocal effective mass tensor calculation. This leadsApplicant to further theorize that the 5/1/3/1 superlattice 25′ shouldbe substantially direct bandgap. As will be understood by those skilledin the art, the appropriate matrix element for optical transition isanother indicator of the distinction between direct and indirect bandgapbehavior.

Turning now to FIG. 5, the above-described superlattice structures maybe incorporated into photodiodes 130 within respective pixels 131 of aCMOS image sensor 120 to advantageously help prevent “crosstalk” betweenadjacent pixels, as will be discussed further below. More particularly,each pixel 131 illustratively includes an insulating film 132 overlyingthe photodiode 130 with metal regions 133 within the insulting film.Each pixel further illustratively includes a color filter 134 overlyingthe insulating layer 132, and a microlens 135 overlying the colorfilter. Each color filter 134 is fabricated to allow a desiredwavelength of light (e.g., red, green, etc.) to pass while excludingothers. In the example illustrated in FIG. 5, the pixel 131 on the lefthas a green color filter 134 (i.e., it passes green light), while thepixel on the right has a red color filter (i.e., it passes red light).The metal regions 133, which are used for signal transmission, causelight reflection within the pixels 131 that results in undesirableoptical crosstalk with respect to the photodiodes 130.

Referring additionally to FIG. 6 and the flow diagram 170 of FIG. 7, afirst example photodiode 130 which may be used in the pixels 131 andassociated method for making the photodiode are now described. Beginningat Block 171, the photodiodes 130 are fabricated by forming a retrogradewell 141 (e.g., by doping with an appropriate dopant) extending downwardinto a semiconductor substrate 140 (e.g., silicon) from a surfacethereof and having a different conductivity type than the substrate(Block 172). Here, the substrate 140 is P-type, and the retrograde well141 is N-type, although the conductivity types shown in FIG. 6 may bereversed in other embodiments. Furthermore, a first well 142 is formedas a ring around a periphery of the retrograde well 141, at Block 173,which also has the same conductivity type as the retrograde well (hereN-type).

Furthermore, a second well 143 is formed or doped within the retrogradewell 141 having the opposite conductivity type of the retrograde well(here P type), at Block 174. More particularly, in the illustratedexample, the first well 142 is more heavily doped (N+) near the top, asis an upper portion 146 of the second well 143 (P+). Additionally, firstand second superlattices 125 a, 125 b are respectively formed overlyingeach of the first and second wells 142, 143, at Block 175. Thesuperlattices 125 a, 125 b may be selectively formed as described abovewith respect to FIGS. 1-4C between shallow trench isolation (STI)regions 144, 145, which may be formed by etching and filling trencheswith an oxide (e.g., silicon dioxide, SiO₂) prior to the superlatticelayer formation. However, in some embodiments, a blanket deposition of asuperlattice layer may be formed over the upper surface of the substrate140, and the STI regions 144, 145 formed thereafter through the blanketsuperlattice layer. The method of FIG. 7 illustratively concludes atBlock 176. Further processing steps may include forming the insulationlayer 132 and metal regions 133, color filters 134, and microlens 135 asdescribed above to complete the CMOS image sensor 120. Also in theillustrated example, the second well 143 is laterally spaced apart fromthe STI region 144, although it may extend laterally to the STI region144 in some embodiments.

The superlattice layers 125 a, 125 b may have respective semiconductorcaps 152 a, 152 b with thickness in range of approximately 3 to 20 nm,for example, although other thicknesses may be used in differentembodiments. In a typical pixel formation process, as insulating oxideis formed over the photodiode, silicon interstitials are injected fromthe surface of the substrate which “smear” out retrograde well profiles.However, the non-semiconductor monolayers within the superlattices 125a, 125 b advantageously trap these interstitials near the surface toaccordingly retain steep retrograde well profiles defined by the wellimplantations, and thereby help stop crosstalk between the pixels 131for front side illumination (FSI) CMOS image sensors. That is, thesuperlattices 125 a, 125 b trap interstitials injected from the surfaceduring oxidation processing, to thereby retain the desired retrogradeprofile defined by ion implantation.

Another example photodiode 130′ and associated method are now describedwith reference to FIG. 8 and the flow diagram 190 of FIG. 9. Beginningat Block 191, a blanket superlattice 125′ is deposited on a substrate140′, at Block 192. Here again, the superlattice 125′ may be formed asdescribed above with reference to FIGS. 1-4C. Next, a semiconductorlayer 150′ is formed on the superlattice 125′, at Block 193. In theillustrated example, the substrate 140′ is highly-doped P-type (P+), andthe semiconductor layer 150′ is also P-type but lightly doped (P−) in alower portion 151′, and has an intermediate doping level (P) in an upperportion 153′. As noted above, the semiconductor layer 150′ mayadvantageously be single crystal, as epitaxial semiconductor growth maycontinue from the substrate 140′ through the superlattice 150′.Moreover, the conductivity types shown in FIG. 8 may be reversed indifferent embodiments.

Furthermore, a retrograde well 141′ is formed extending downward intothe semiconductor layer 150′ from a surface thereof and having an N-typeconductivity dopant, at Block 194, followed by a first well 142′ forminga ring around a periphery of the retrograde well and having P-typeconductivity, at Block 195. Furthermore, a second well 143′ is formedwithin or above the retrograde well 141′ having P-type conductivity, atBlock 196, which illustratively concludes the method shown in FIG. 9(Block 197). Further processing may include the forming of STI regions145′, as well as forming the insulation layer 132 and metal regions 133,color filters 134, and microlens 135 as described above to complete theCMOS image sensor 120.

By way of example, the superlattice 125′ may have a cap 152′ ofapproximately 2 to 10 um, although other thicknesses may be used indifferent embodiments. The superlattice 125′ advantageously blocksdopant (e.g., boron) diffusion from the substrate (P+) to the lowerportion 151′ (P−) to thereby improve retrograde quality. Moreover, italso helps to block metal diffusion to improve carrier lifetime in theretrograde well 143′, as will be appreciated by those skilled in theart.

As a result, the photodiode 130′ may also advantageously reducecrosstalk for FSI CMOS image sensor applications. That is, thesuperlattice 125′ may again improve the final retrograde well profilevia its diffusion blocking effects to thereby improve crosstalk betweenadjacent pixels 131. It should be noted that the order of certain steps(e.g., the order of well doping steps) may be changed in differentembodiments that what is shown in the examples of FIGS. 7 and 9, as willbe appreciated by those skilled in the art.

Many modifications and other embodiments of the invention will come tothe mind of one skilled in the art having the benefit of the teachingspresented in the foregoing descriptions and the associated drawings.Therefore, it is understood that the invention is not to be limited tothe specific embodiments disclosed, and that other modifications andembodiments are intended to be included within the scope of the appendedclaims.

That which is claimed is:
 1. A method for making a CMOS image sensorcomprising: forming a plurality of laterally adjacent photodiodes on asemiconductor substrate having a first conductivity type by forming aretrograde well extending downward into the substrate from a surfacethereof and having a second conductivity type, forming a first wellaround a periphery of the retrograde well also having the secondconductivity type, forming a second well within the retrograde wellhaving the first conductivity type, and forming first and secondsuperlattices respectively overlying each of the first and second wells,each of the first and second superlattices comprising a plurality ofstacked groups of layers, each group of layers comprising a plurality ofstacked base semiconductor monolayers defining a base semiconductorportion, and at least one non-semiconductor monolayer constrained withina crystal lattice of adjacent base semiconductor portions.
 2. The methodof claim 1 wherein the first well defines a ring, and wherein the secondwell is within the ring.
 3. The method of claim 1 wherein forming thesecond well comprises forming a lower portion and an upper portion, theupper portion having a higher dopant concentration than the lowerportion.
 4. The method of claim 1 further comprising forming a shallowtrench isolation (STI) region between the first and second wells.
 5. Themethod of claim 1 further comprising forming a respective shallow trenchisolation (STI) region between laterally adjacent photodiodes.
 6. Themethod of claim 1 further comprising forming a respective microlensoverlying each of the photodiodes.
 7. The method of claim 1 furthercomprising forming a respective color lens overlying each of thephotodiodes.
 8. The method of claim 1 wherein the first and secondsuperlattices each further comprises a semiconductor cap layer thereon.9. The method of claim 1 wherein the at least one non-semiconductormonolayer comprises oxygen.
 10. The method of claim 1 wherein thesemiconductor monolayers comprise silicon.
 11. A method for making aCMOS image sensor comprising: forming a plurality of laterally adjacentphotodiodes on a semiconductor substrate having a first conductivitytype by forming a retrograde well extending downward into the substratefrom a surface thereof and having a second conductivity type, forming afirst well around a periphery of the retrograde well also having thesecond conductivity type, forming a second well within the retrogradewell having the first conductivity type, and forming first and secondsuperlattices respectively overlying each of the first and second wells,each of the first and second superlattices comprising a plurality ofstacked groups of layers, each group of layers comprising a plurality ofstacked base semiconductor monolayers defining a base semiconductorportion, and at least one non-semiconductor monolayer constrained withina crystal lattice of adjacent base semiconductor portions; forming arespective color lens overlying each of the photodiodes; and forming arespective microlens overlying each of the color lenses.
 12. The methodof claim 11 wherein the first well defines a ring, and wherein thesecond well is within the ring.
 13. The method of claim 11 whereinforming the second well comprises forming a lower portion and an upperportion, the upper portion having a higher dopant concentration than thelower portion.
 14. The method of claim 11 further comprising forming ashallow trench isolation (STI) region between the first and secondwells.
 15. A method for making a CMOS image sensor comprising: forming aplurality of laterally adjacent photodiodes on a semiconductor substrateby forming a retrograde well extending downward into the substrate froma surface thereof and having a second conductivity type, forming a firstwell around a periphery of the retrograde well also having the secondconductivity type, forming a second well within the retrograde wellhaving the first conductivity type, and forming first and secondsuperlattices respectively overlying each of the first and second wells,each of the first and second superlattices comprising a plurality ofstacked groups of layers, each group of layers comprising a plurality ofstacked base silicon monolayers defining a base semiconductor portion,and at least one oxygen monolayer constrained within a crystal latticeof adjacent base silicon portions.
 16. The method of claim 15 whereinthe first well defines a ring, and wherein the second well is within thering.
 17. The method of claim 15 wherein forming the second wellcomprises forming a lower portion and an upper portion, the upperportion having a higher dopant concentration than the lower portion. 18.The method of claim 15 further comprising forming a shallow trenchisolation (STI) region between the first and second wells.
 19. Themethod of claim 15 further comprising forming a respective microlensoverlying each of the photodiodes.
 20. The method of claim 15 furthercomprising forming a respective color lens overlying each of thephotodiodes.